Un nuevo horizonte tecnológico para los dispositivos en el infrarrojo
integración de antimoniuros, silicio y grafeno
Keywords:
gallium antimonide, silicon, graphene, infrared devices
Abstract
Antimonides, silicon and graphene are poised to revolutionize the world of infrared devices. The magic unfolds when these materials are combined into a unique structure, enhancing their exceptional properties, and giving rise to what could be called a “superstructure” with unprecedented efficiency. This advance opens the possibility of a new generation of flexible, cost-effective, and energy-efficient devices. These infrared devices play a crucial role in strategic areas of our society, such as communications, energy, environment, and health. Let´s explore the advantages of integrating these materials and how they will surprise us in the future.
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References
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Casallas-Moreno, Y. L.-M.-L.-F.-H.-G.-Á. Growth mechanism and physical properties of the type-I In0. 145Ga0. 855AsySb1− y/GaSb alloys with low As content for near infrared applications. Journal of Alloys and Compounds, 808, pp.151690, 2019. https://www.sciencedirect.com/science/article/ pii/S0925838819329238
Chi-Tai Wang, C.-S. C. Competitive strategies for Taiwan’s semiconductor industry in a new world economy. Technology in Society, 36, pp.60-73, 2014. https:// www.sciencedirect.com/science/article/pii/ S0160791X13000870
Conlon, B. P. Performance of GaSb Photovoltaics with Graphene Coating. 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), pp.219-221, 2017. https:// ieeexplore.ieee.org/stamp/stamp.jsp?arnumber= 8366632
González-Morales, M. A.-M.-B.-L.-R.- F.-P. Determination of lateral strain in InGaAsSb alloys and its effect on structural and optical properties. Journal of Materials Science, 58[41], pp.16172- 16183, 2023. https://link.springer.com/article/ 10.1007/s10853-023-08991-6
Manzo, S. S. Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene- terminated surfaces. Nature communications, 13[1], pp.4014, 2022. https://www. nature.com/articles/s41467-022-31610-y
Xiaoyue Wang, C. L. Three-dimensional transistors and integration based on low-dimensional materials for the post-Moore’s law era. Materialstoday, 63, pp.170-187, 2023. https://www.sciencedirect.com/ science/article/pii/S1369702122003236
Zeng, A. The Development of Photolithographic Technology and Machines. SHS Web of Conferences, 163, pp.03021, 2023. https://www.shs-conferences.org/ articles/shsconf/pdf/2023/12/shsconf_icssed2023_ 03021.pdf
Published
2025-01-27
How to Cite
Colin Becerril, N., Ramírez López, M., Villa Martínez, G., Rodríguez Fragoso, P., Herrera Pérez, J. L., Mendoza Álvarez, J., & Casallas Moreno, Y. L. (2025). Un nuevo horizonte tecnológico para los dispositivos en el infrarrojo: integración de antimoniuros, silicio y grafeno. Contactos, Revista De Educación En Ciencias E Ingeniería, (135), 70 - 78. Retrieved from https://contactos.izt.uam.mx/index.php/contactos/article/view/489
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